About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE Journal of Solid-State Circuits
Paper
Level-Shifted 0.5-μm BiCMOS Circuits
Abstract
A new circuit concept, level shifting, is presented for scaled BiCMOS circuits. A full-swing, ground-level-shifted (FS-GLS) BiCMOS circuit has shown approximately 1.6 X speed improvement over a conventional partial-swing BiCMOS circuit, and a 4 x better driving capability over a CMOS circuit at 3.3 V. With a high-performance p-n-p device, simulations show that the level-shifted complementary BiCMOS can provide further speed leverage over the n-p-n only BiCMOS circuit. © 1990 IEEE