Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Single layers of InAs are grown on GaAs at different orientations by molecular beam epitaxy. They are evaluated by electron diffraction, supplemented by X-ray absorption and reflection measurements. The threshold in layer thickness for lattice relaxation is similar for both (100) and (100). The former, however, generally exhibits an extended transition region with details depending on the growth conditions, while such a transition is invariably abrupt in the latter situation. The (100) growth, in addition, retains the narrowly streaked diffraction patterns throughout the deposition in contrast to the (100) growth. These observations are attributed to different microscopic local atomic environments. © 1987.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Ronald Troutman
Synthetic Metals