J.E. Demuth, Ph. Avouris, et al.
Journal of Electron Spectroscopy and Related Phenomena
The lateral scaling in carbon nanotube field effect transistors was analyzed. These devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and the drain. This was due to a change from Schottky-barrier modulation at the contacts to bulk switching.
J.E. Demuth, Ph. Avouris, et al.
Journal of Electron Spectroscopy and Related Phenomena
B. Gumhalter, K. Wandelt, et al.
Physical Review B
G.M. Wallraff, D. Medeiros, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J. Knoch, S. Mantl, et al.
DRC 2004