Conference paper
Carbon nanotube electronics and optoelectronics
Ph. Avouris, A. Afzali, et al.
IEDM 2004
The lateral scaling in carbon nanotube field effect transistors was analyzed. These devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and the drain. This was due to a change from Schottky-barrier modulation at the contacts to bulk switching.
Ph. Avouris, A. Afzali, et al.
IEDM 2004
R.E. Walkup, Ph. Avouris, et al.
MRS Symposium 1983
B.N.J. Persson, Ph. Avouris
Chemical Physics Letters
Philip G. Collins, M.C. Hersam, et al.
Physical Review Letters