Ph. Avouris, J.E. Demuth
Journal of Photochemistry
The lateral scaling in carbon nanotube field effect transistors was analyzed. These devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and the drain. This was due to a change from Schottky-barrier modulation at the contacts to bulk switching.
Ph. Avouris, J.E. Demuth
Journal of Photochemistry
M. Radosavljević, J. Appenzeller, et al.
Applied Physics Letters
Ph. Avouris, R. Kawai, et al.
Physical Review Letters
Ph. Avouris, R. Martel, et al.
Physica B: Condensed Matter