S.C. Varshney, J.F. Vetelino, et al.
Physical Review B
Large photoenhancement (by a factor of ≳100 in some devices) of electroluminescence in thin-film ZnS: Mn devices has been observed near and above the electroluminescence threshold effects when the devices were excited with the near-uv lines of an Ar+ laser. The intensity of the photoenhanced electroluminescence was found to have a sublinear dependence on the laser intensity, saturate, and then decrease with increased laser power.
S.C. Varshney, J.F. Vetelino, et al.
Physical Review B
P.Y. Yu, N. Amer, et al.
Physical Review B
G.A. Sai-Halasz, A. Pinczuk, et al.
Solid State Communications
Ph. Avouris, I.F. Chang, et al.
Journal of Luminescence