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Publication
MRS Proceedings 1992
Conference paper
Large area plasma enhanced chemical vapor deposition of nonstoichiometric silicon nitride
Abstract
This paper presents results on PECVD of low refractive index silicon nitride in a large area system. Film deposition characteristics, such as deposition rate and thickness uniformity, were investigated over a wide range of process parameters, such as gas composition, power, pressure, and N2 pressure. Film properties, such as RI, absorbance, stress, and etch rate, have also been studied. A general model, which includes both the deposition and etching mechanisms, has been developed to explain these results. This model could explain the film uniformity issue in the process.