Island growth of Ge on Si(001) and CoSi₂ on Si(111) studied with UHV electron microscopy

We have observed and compared the growth of nanosize, self-assembled islands in two strained heteroepitaxial systems, Ge on Si(001) and CoSi2 on Si(111). Island growth took place in a transmission electron microscope and in a low-energy electron microscope, both of which had been modified to allow in situ deposition. The kinetics of island formation are substantially different in the two systems, suggesting different growth mechanisms. We discuss the two mechanisms and their implications for controlled island growth for novel electronic devices.