About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Irreversible increase of the low-temperature paramagnetism in GaAs substrates
Abstract
The magnetic susceptibility of undoped GaAs substrates is measured from 2 to 300 K. It comprises two types of temperature-dependent net-paramagnetic contributions. One is a Van Vleck-type paramagnetic contribution which scales inversely with the band gap of the semiconductor and thus increases up to room temperature. The other resembles a Langevin-type paramagnetism which sets in only at low temperatures after certain thermal cycling procedures. © 2006 American Institute of Physics.