Ion-Implantation conditions and annealing effects for contiguous disk bubble devices

Abstract

A systematic study of the anisotropy field change (ΔH<inf>k</inf>) in magnetic garnet films under various ion-implantation and annealing conditions was performed. For most ions the maximum ΔH<inf>k</inf> which could be obtained with the materials used was about 3000 Oe. However for hydrogen ion implantation the measured value showed no such saturation effect up through the highest damage level employed (2.0 eV/Å3) at which point ΔH<inf>k</inf> was 16500 Oe. Multiple ion implantation with mixtures of hydrogen and limited amounts of heavier ions (e.g. He or B) yielded values of ΔHk well beyond the saturation values seen with the heavier ions alone. Post annealing propagation margins of 16% of mid-bias for propagation patterns having a cell size of 30 µm² were measured. © 1980 IEEE