Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The manganese activated zinc silicates doped with or without arsenic are investigated using photostimulated luminescence technique in addition to conventional photoluminescence and phosphorescence measurements. The experimental results provide information about the energy levels of the Mn++ and the traps and how they interact during the luminescence process. Based on conclusions deduced from experimental data, a physical model is proposed for interpreting the zinc silicate luminescence and phosphorescence with some clues on the role of the arsenic doping and its effect on phosphorescence. © 1980, The Electrochemical Society, Inc. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
John G. Long, Peter C. Searson, et al.
JES
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Hiroshi Ito, Reinhold Schwalm
JES