Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A contribution to the intervalley scattering rate in n-germanium is the direct transition induced by the donor-ion potential, U. The scattering rate for this process is calculated to lowest order in U, using the relation between the intervalley matrix elements of U and the singlet-triplet splitting of the donor ground state. The predicted scattering rate for Arsenic agrees with the experimental results of Weinreich, Sanders and White for the intervalley scattering due to donor ions, above 40°K. © 1964.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983