About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Interfacial microstructures of ultrathin Ge layers on Si probed by x-ray scattering and fluorescence yield
Abstract
Angular dependence of grazing-incidence x-ray scattering and Ge Kα fluorescence yield were measured for buried ultrathin Ge layers grown on bulk Si by molecular beam epitaxy. Results obtained for samples with different Ge layer thickness are compared. The data reveal information on microstructures in these layered materials in terms of the average interfacial roughness, correlation lengths of height fluctuations, and Ge density profile. Structural parameters are obtained by comparison of experimental data with theoretical models.The results also indicate that the interfacial roughness at neighboring interfaces is highly correlated. Significant changes of microstructures in the Ge epilayer are found as the layer thickness approaches the critical thickness. The x-ray scattering techniques are demonstrated to be capable of detecting a precursor of lattice relaxation in multilayers of lattice-mismatched compound semiconductors.