Publication
Journal of Applied Physics
Paper

Interface morphology of epitaxial growth of Ge on GaAs and GaAs on Ge by molecular beam epitaxy

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Abstract

Interface morphology of the molecular beam epitaxial growth of Ge on (100) GaAs and of GaAs on (100) Ge at 400°C has been studied by reflection high energy electron diffraction. The (100) Ge surface shows a (2×2) reconstruction pattern. A smooth and planar growth of Ge on GaAs is observed; growth of GaAs on Ge, however, shows a rougher surface with a roughness estimated to be several angstroms which is in agreement with our studies on the Ge-GaAs superlattices using other techniques.

Date

01 Dec 1982

Publication

Journal of Applied Physics

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