Intensity-dependent cyclotron resonance in a GaAs/GaAlAs two-dimensional electron gas

Abstract

Cyclotron resonance of a two-dimensional electron gas at a GaAs/GaAlAs interface is measured in the far infrared at intensities of up to 10 kW/cm 2. Both the cyclotron mass and the carrier density are independent of intensity but the relaxation time changes with a dependence which is similar to that observed earlier in high dc field mobility studies.