InN nanowire transistors: Growth, electronics & photonics

Abstract

Semiconducting group-III nitrides have been the focus of intense research in recent years because of their excellent inherent electronic and optoelectronic properties. In particular, indium nitride (InN) has attracted much attention due to the lowest effective electron mass among all the III-nitride compounds, potentially leading to a high mobility. Optically, it was reported that InN has an unexpectedly low band gap of around 0.7-0.9 eV at room temperature, i.e., emitting in a wavelength of 1-2μm, a range widely used by the telecommunication industry. ©2010 IEEE.