In_0.35Ga_0.65P light-emitting diodes grown by gas-source molecular beam epitaxy

Abstract

Light-emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p-i-n junctions in In0.35Ga 0.65P. This alloy is close to that with the largest direct band gap in the InyGa1-yP system and has lattice mismatch from the GaAs substrate of 1%. Specularly smooth surface morphology is obtained in this gas-source MBE material through the use of a unique strained-layer-superlattice buffer. Diodes exhibit good rectification and good reverse breakdown characteristics.