Influence of local magnetization on transport in Cd_0.91Mn_0.09Te:In

Abstract

We describe the influence of local magnetization on electron localization and transport properties on the insulating side of the metal insulator transition in the dilute magnetic persistent photoconductor Cd0.91Mn0.09Te:In. Measurements of both the temperature dependence of the transport properties, and also the dielectric constant, are reported for just one sample in which the carrier concentration n was varied by photodoping. From these results we are able to extract the carrier concentration dependence of the localization length and the permittivity of the electrons. We also report on a new transport effect which occurs at ultra low temperatures and/or carrier concentrations very close to the metal insulator transition. We find that this mechanism is totally magnetic in origin and are able to explain it in terms of the well developed ideas of magnetic polarons in magnetic semiconductors.