Anil W. Dey, Johannes Svensson, et al.
Nano Letters
The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm 2 at V DS = 0.16 V and a record-high current density of 3.6 MA/cm 2 at V DS = -0.5 V. © 2012 American Institute of Physics.
Anil W. Dey, Johannes Svensson, et al.
Nano Letters
Bahram Ganjipour, Sobhan Sepehri, et al.
Nanotechnology
Anil W. Dey, Johannes Svensson, et al.
Nano Letters
Martin Ek, B. Mattias Borg, et al.
ACS Nano