In situ resistance of Y₁Ba₂Cu₃O _x films during anneal

Abstract

Measurements of electrical resistance of thin films of the high-temperature superconductor Y1Ba2Cu3Ox have been carried out between 100 and 800°C, and in the range between roughly 0.1 and 1 atm of ambient oxygen. Results are reported for both quick and slow heating, and also for sudden changes in oxygen partial pressure. At constant temperature we observe that the response to the oxygen partial pressure is both quick and reversible. We show evidence that quick heating is preferable, and we also observe features in the resistance similar to those reported in bulk samples and interpreted as an order-disorder transition of oxygen in the one-dimensional Cu-O chains.