Publication
Applied Physics Letters
Paper

In situ measurements of SiO(g) production during dry oxidation of crystalline silicon

View publication

Abstract

We report in situ measurements of SiO(g) evolution during the oxidation of silicon by O2 for a range of experimental conditions including the transition from active to passive oxidation. The results show that this transition occurs when the SiO(g) partial pressure reaches the equilibrium vapor pressure for the reaction Si(s)+SiO(s)⇄2SiO(g). During the growth of a SiO2 film, there is no significant transport of SiO molecules into the gas phase.

Date

01 Jan 1988

Publication

Applied Physics Letters

Authors

Share