Improve variability in carbon nanotube FETs by scaling

Abstract

Carbon nanotube transistors are shown to have large performance variation due to their diameter variation, which is not acceptable to VLSI technology. We demonstrate that by proper scaling we can reach >2 mA/f.l.m on-state current in 90% of our nanotube devices. More importantly, we demonstrate proper scaling can reduce the current variation by 2 orders of magnitude and mitigate the impact of tube diameter distribution. © 2010 IEEE.