Implantation induced order-disorder transition in ga0.52lno.48p/(alo.35gao.65)o.5lno.5p heterostructures

Abstract

The implantation induced transition from the ordered to the disordered state of Gao.52lno.48P/(Alo.35Gao.65)o.5 Ino.öP—layers was investigated by means of Ar+ ion implantation, rapid thermal annealing (RTA) and photoluminescence spectroscopy. The implantation dose and annealing temperature dependence of the luminescence was studied in the dose range from 1 x 109 cm-2 to 5 x 1013 cm-2 and in the temperature range from 500°C up to 1025°C. By an Ar+ dose of 2 x 1012 cm-2 the temperature of the order-disorder transition can be decreased by about 200°C compared to the transition temperature of only annealed samples. For annealing temperatures higher than 700 °C a dose variation by less than one order of magnitude causes an emission energy blue shift of the GalnP luminescence band by about 100 meV due to a complete disordering of the previously ordered layers. © 1993 The Japan Society of Applied Physics.