The impact of diffusionless anneal using dynamic surface anneal (DSA) on the electrical properties of p-type metal-oxide-semiconductor devices with high- k gate dielectrics and metal gate was investigated by monitoring flatband voltage (VFB) and equivalent oxide thickness (EOT) change. Compared to rapid thermal anneal, DSA induces a positive VFB shift without EOT degradation. This finding is attributed to suppression of positively charged oxygen vacancies [Vo ++] generation in high- k dielectrics due to the shorter thermal budget. Processing parameters including high- k dielectrics, TiN metal gate thickness, and Si cap deposition temperature significantly affect thermally induced-oxygen vacancies, leading to different VFB behaviors. © 2011 American Institute of Physics.