D. Arnold, E. Cartier, et al.
SPIE Laser-Induced Damage in Optical Materials 1990
Positive charge formation and its possible relationship to impact ionization in silicon dioxide have been controversial issues for many years. In this study, band-gap ionization due to the development of a high-energy tail in the hot-electron energy distribution is shown to occur in films thicker than 20.0 nm at fields higher than 7 MV/cm. This process is demonstrated to "directly" account for hole currents in the substrate circuit of n-channel field-effect transistors and for the observation of positively trapped charges accumulating at the substrate-silicon/silicon-dioxide interface at low injected-carrier fluences (less than 0.001 C/cm2) before the onset of trap creation.
D. Arnold, E. Cartier, et al.
SPIE Laser-Induced Damage in Optical Materials 1990
K. Choi, H. Jagannathan, et al.
VLSI Technology 2009
D. Arnold, E. Cartier, et al.
SPIE Laser-Induced Damage in Optical Materials 1990
E. Cartier, F.R. McFeely, et al.
VLSI Technology 2005