J.H. Stathis, R. Bolam, et al.
INFOS 2005
Strain-relaxed Si1-xGex films have been investigated using X-ray microdiffraction with a diffracted beam footprint of 0.3 μm×2 μm. Intensity variations in the diffracted beam at different positions on the sample are due to the presence of local tilted regions which are larger in area than the diffracted X-ray beam. These regions are shown to have the same lattice parameter but different orientation with respect to the Si substrate. These regions arise from dislocation pileups, which consist of a larger number of dislocations when larger mismatch strain is relieved.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials