PaperEffect of iso-electronic dopants on the dislocation density of GaAsG.M. Blom, J. WoodallJournal of Electronic Materials
PaperHigh carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAsT.J. De Lyon, N.I. Buchan, et al.Applied Physics Letters
PaperSuperconducting InGaAs junction field-effect transistors with Nb electrodesA.W. Kleinsasser, T.N. Jackson, et al.Applied Physics Letters
PaperComparative study of minority electron properties in p+-GaAs doped with beryllium and carbonM.L. Lovejoy, M.R. Melloch, et al.Applied Physics Letters
