PaperExperimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAsE.S. Harmon, M.L. Lovejoy, et al.Applied Physics Letters
Conference paperHigh transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu3Ge ohmic contactsC.L. Lin, M.O. Aboelfotoh, et al.IEDM 1993
PaperIVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During AnnealingJ. Woodall, H. Rupprecht, et al.IEEE T-ED