William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
A new type of trilayer amorphous silicon (a-Si) thin film transistor (TFT) is presented in this paper. It also has a self-aligned source/drain-to-gate configuration and uniformly narrow source/drain vias. The finished transistor shows an on/off current ratio greater than 107 and the on-current is proportional to the channel width-to-length ratio. Compared with a conventional single-channel TFT that occupies the same area, this new TFT has a higher channel width-to-length ratio and a higher on-current. The physical limitations of the new TFT, based on the current large area lithography tool, are also discussed. This TFT can be applied to displays and imagers that require a high on-current and a low area occupancy.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Michiel Sprik
Journal of Physics Condensed Matter
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983