R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
C+ and N+ implantation into type IIa diamond are performed at various temperatures (25 to 1000°C) and ion‐induced damage is studied by EPR measurements at 1.2 to 300 K. Hot implantation at 1000°C results in a reduced spin density of “amorphous” carbon by an order of magnitude less than that due to cold‐implantation and a subsequent annealing at 1000°C. Moreover, hot implantation above 600°C produces two new spin‐1 centers, A‐5 and A‐6, which are tentatively identified as a small multivacancy cluster. Copyright © 1978 WILEY‐VCH Verlag GmbH & Co. KGaA
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films