Publication
Electronics Letters
Paper

High-speed gallium-arsenide schottky-barrier field-effect transistors

View publication

Abstract

The letter shows that gallium arsenide is a well suited material for high-frequency field-effect transistors. From preliminary measurements on realised transistors, it is shown that the frequency limit for power amplification is considerably higher than for other known transistors. The processes involved are briefly described. © 1970, The Institution of Electrical Engineers. All rights reserved.

Date

16 Apr 1970

Publication

Electronics Letters

Authors

Share