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Electronics Letters
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High-speed gallium-arsenide schottky-barrier field-effect transistors

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Abstract

The letter shows that gallium arsenide is a well suited material for high-frequency field-effect transistors. From preliminary measurements on realised transistors, it is shown that the frequency limit for power amplification is considerably higher than for other known transistors. The processes involved are briefly described. © 1970, The Institution of Electrical Engineers. All rights reserved.

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Electronics Letters

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