H.P. Meier, E. Van Gieson, et al.
Applied Physics Letters
The letter shows that gallium arsenide is a well suited material for high-frequency field-effect transistors. From preliminary measurements on realised transistors, it is shown that the frequency limit for power amplification is considerably higher than for other known transistors. The processes involved are briefly described. © 1970, The Institution of Electrical Engineers. All rights reserved.
H.P. Meier, E. Van Gieson, et al.
Applied Physics Letters
R.F. Broom, H.P. Meier, et al.
Journal of Applied Physics
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1989
H.P. Meier, E. Van Gieson, et al.
Journal of Crystal Growth