About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
High-sensitivity silicide films for optical recording
Abstract
The laser writing power for near-noble metal silicide films has been reduced significantly by several techniques including amorphization of the thin metal films and fabrication of trilayers. Rh films alloyed with B by thermal evaporation from an alloy slug (containing 10 wt. % B) show no crystalline structure. In bilayer structures consisting of RhB (250 Å) and Si, the characteristic reflection minimum is found to decrease in magnitude and to shift toward longer wavelength: 20% at 6000 Å for 150-Å-thick Si to 8% at 10 000 Å for 400-Å-thick Si. Static laser writing power on samples deposited on polymethyl methacrylate substrates for half-saturation of contrast with 50 ns pulse width at 6417 Å is 18 mW. Further reduction in writing power was achieved by fabrication of a trilayer structure consisting of Al(300 Å)-SiO2(900 Å)-Au(60 Å)-Si(60 Å). Typical writing power is below 10 mW for spot size slightly smaller than 1 micron.