Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Field effect transistors are reaching the limits imposed by the scaling of materials and the electrostatic gating physics underlying the device. In this Communication, a new type of switch based on different physics, which combines known piezoelectric and piezoresistive materials, is described and is shown by theory and simulation to achieve gigahertz digital switching at low voltage (0.1 V). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Michiel Sprik
Journal of Physics Condensed Matter
Frank Stem
C R C Critical Reviews in Solid State Sciences
A. Reisman, M. Berkenblit, et al.
JES