High response piezoelectric and piezoresistive materials for fast, low voltage switching: Simulation and theory of transduction physics at the nanometer-scale

Abstract

Field effect transistors are reaching the limits imposed by the scaling of materials and the electrostatic gating physics underlying the device. In this Communication, a new type of switch based on different physics, which combines known piezoelectric and piezoresistive materials, is described and is shown by theory and simulation to achieve gigahertz digital switching at low voltage (0.1 V). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.