High resolution vacuum scanning thermal microscopy of Hf O2 and Si O2

Abstract

We present scanning thermal microscopy (SThM) measurements on a sample consisting of regions of 3 nm thick Hf O2 film and 2 nm thick Si O2 on a silicon substrate. The experiments were preformed in high vacuum conditions using microfabricated silicon cantilevers with sharp heatable tips, facilitating the unprecedented achievement of a lateral SThM image resolution of 25 nm. In addition, the heat transfer through the tip to the sample was investigated using approach curves and used to determine the thermal conductivity of the 3 nm thick Hf O2 layer. © 2008 American Institute of Physics.