Publication
Applied Physics Letters
Paper

High resolution scanning photoluminescence characterization of semi-insulating GaAs using a laser scanning microscope

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Abstract

Spatially resolved photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain boundaries of the polyganized dislocation cell network for the first time by photoluminescence. Both the cell structure and the Cottrell cloud are clearly resolved.

Date

01 Dec 1986

Publication

Applied Physics Letters

Authors

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