High mobility solution-deposited chalcogenide films for flexible applications

Abstract

The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm2/V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe2-xSx, In2Se 3 and p-type CuInSe2-xSx TFT channels have been deposited by spin coating from hydrazine- and non-hydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm2/V-s and 106, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices. © 2005 IEEE.