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Publication
Journal of Applied Physics
Paper
Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
Abstract
Heavy Si doping of GaAs and AlGaAs grown by molecular beam epitaxy has been studied. By using a slow growth rate of 1000 Å/h, the electron concentration obtained for GaAs was 1.1×1019 cm -3, which is higher than the previously reported limit of 5×1018 cm-3. The accumulation of excess Si near the surfaces of GaAs and AlGaAs has been identified by secondary ion mass spectroscopy. A Si-induced 3×2 surface structure has been observed, and the influence of arsenic to gallium flux ratio on the surface morphology is discussed. Photoluminescence spectra of the doped layers are presented.