M.S. Goorsky, Subramanian S. Iyer, et al.
Applied Physics Letters
Arsenic doping of epitaxial grown Si over the temperature range from 850°C to 550°C was investigated in an ultraclean atmospheric-pressure chemical vapor deposition reactor. Growth was carried out from dichlorosilane (DCS) in H2 carrier gas. Arsenic could be incorporated into single crystal silicon at levels approaching 10 at. %. Carrier concentrations exceeding 1×1020/cm3 were obtained for the as-grown films. The material remained single-crystalline, as measured by ion channeling and cross-section transmission electron microscopy, and exhibited excellent surface morphology with no Hillock formation observed. AsH3 dramatically enhanced the growth rate of Si at lower temperatures.
M.S. Goorsky, Subramanian S. Iyer, et al.
Applied Physics Letters
T.O. Sedgwick, P. Agnello
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
D.L. Harame, J.H. Comfort, et al.
VLSI Technology 1993
J.N. Burghartz, T.O. Sedgwick, et al.
BCTM 1993