Publication
Applied Physics Letters
Paper

GaAs-oxide removal using an electron cyclotron resonance hydrogen plasma

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Abstract

The surface chemistry of GaAs-oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x-ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen-plasma oxide reduction are also discussed.

Date

01 Dec 1991

Publication

Applied Physics Letters

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