Publication
Journal of Physics and Chemistry of Solids
Paper

Free carrier absorption in n-type CdTe

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Abstract

Experimental results for free carrier absorption at room temperature in lightly doped samples of n-type CdTe, including the λ3 dependence of the absorption coefficient on the photon wavelength, can be satisfactorily accounted for in terms of polar optical mode scattering with a very small contribution by impurity scattering. Use is made of the quantum theory of free carrier absorption initially developed for direct gap III-V semiconducting compounds, which utilizes the Kane band structure and includes nonparabolicity, arbitrary spin-orbit splitting values, overlap wave function factors, and intermediate states in other bands. © 1973.

Date

01 Jan 1973

Publication

Journal of Physics and Chemistry of Solids

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