Free carrier absorption in n-type CdTe

Abstract

Experimental results for free carrier absorption at room temperature in lightly doped samples of n-type CdTe, including the λ3 dependence of the absorption coefficient on the photon wavelength, can be satisfactorily accounted for in terms of polar optical mode scattering with a very small contribution by impurity scattering. Use is made of the quantum theory of free carrier absorption initially developed for direct gap III-V semiconducting compounds, which utilizes the Kane band structure and includes nonparabolicity, arbitrary spin-orbit splitting values, overlap wave function factors, and intermediate states in other bands. © 1973.