Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon

Joseph M. Jasinski

doi:10.1016/0009-2614(93)80144-E

Chemical Physics Letters

Paper

27 Aug 1993

Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon

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Abstract

Mass spectrometric evidence is presented for the direct formation of gas-phase silyl radical, SiH3, as a product of the heterogeneous etching reaction of silicon films with hydrogen or deuterium atoms. © 1993.

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Mass spectrometric studies of remote helium plasma dissociation of silane

Joseph M. Jasinski

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane

Joseph M. Jasinski, Jack O. Chu

The Journal of Chemical Physics

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Absolute rate constants for silylene reactions with hydrocarbons at 298 K

Jack O. Chu, David B. Beach, et al.

Journal of Physical Chemistry

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High vibrational overtone photochemistry of 1-cyclopropylcyclobutene

Joseph M. Jasinski, Joan K. Frisoll, et al.

Journal of Physical Chemistry

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Abstract

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Mass spectrometric studies of remote helium plasma dissociation of silane

Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane

Absolute rate constants for silylene reactions with hydrocarbons at 298 K

High vibrational overtone photochemistry of 1-cyclopropylcyclobutene