Conference paper
Growth kinetics of si and ge nanowires
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009
Paper
Facet growth under stress: The limits of strained-layer stability
Abstract
The growth kinetics of a crystal facet at low temperature and low stress are analyzed. It is shown that a planar strained layer can, in principle, be grown to arbitrary thickness by growing sufficiently slowly.
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