François Léonard, J. Tersoff
Physical Review Letters
The growth kinetics of a crystal facet at low temperature and low stress are analyzed. It is shown that a planar strained layer can, in principle, be grown to arbitrary thickness by growing sufficiently slowly.
François Léonard, J. Tersoff
Physical Review Letters
J. Tersoff
Physical Review B
J. Tersoff
Physical Review Letters
L.E. Shilkrot, D.J. Srolovitz, et al.
Applied Physics Letters