Publication
EUROSOI-ULIS 2016
Conference paper

Fabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures

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Abstract

Lateral N+/n/N+ InGaAs-on-insulator structures are successfully fabricated by direct wafer bonding and selective regrowth. Electrical characterizations are performed for varying n-layer thickness from fully-depleted films up to the limit of partial depletion. Measurements under externally applied uniaxial tensile strain show an improved drive current.

Date

23 Mar 2016

Publication

EUROSOI-ULIS 2016

Authors

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