I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Paper
Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures
Abstract
The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference. © 1985 The American Physical Society.