Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference. © 1985 The American Physical Society.
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
M.A. Lutz, R.M. Feenstra, et al.
Surface Science