Publication
Physical Review B
Paper

Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures

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Abstract

The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference. © 1985 The American Physical Society.

Date

15 May 1985

Publication

Physical Review B

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