The epitaxial growth of thin EuS films by vacuum deposition on a variety of ionic single-crystal substrates has been investigated. The structure and the epitaxy were determined by a sensitive Seemann-Bohlin diffractometer. Good epitaxial growth is obtained on the cleavage plane of mica and on the (111) plane of spinel and MgO. Under identical deposition conditions, the tendency for EuS to grow epitixially on the (100) plane of spinel and MgO is rather small; however, strong (100) textured films are obtained. Copyright © 1973 by The Institute of Electrical and Electronics Engineers, Inc.