Elemental marking of Si on Si(100) interfaces

Abstract

Submonolayer coverages of B, Sn, and Ge are prepared on Si(100) surfaces, and characterized using time-of-flight scattering and recoiling spectroscopy. The dopant]] marks" the initial Si interface, and Si is grown on top of the]] marked" surface, and is designated Si*. Attenuation of the elemental B, Sn, and Ge signals by Si* is used to evaluate Si precursors for atomic layer epitaxy, and compare the thermal stability of Si*/B/Si(100), Si*/Sn/Si(100), and Si*/Ge/Si(100) structures.