J.E. Demuth, D.W. Jepsen, et al.
Physical Review Letters
Scanning tunneling microscopy is used to determine the atomic structure, charge state, and electronic energy spectrum of isolated Si dangling-bond defects at the Al/Si(111) surface. Si adatoms substituting for Al in the first atomic layer give rise to a dangling-bond defect state near -0.4 eV which is strongly localized in space. Tunneling spectra and local band-bending measurements are inconsistent with simple one-electron band theory and demonstrate the importance of many-electron effects. © 1988 The American Physical Society.
J.E. Demuth, D.W. Jepsen, et al.
Physical Review Letters
R.J. Hamers, P.L. Houston, et al.
The Journal of Chemical Physics
Ph. Avouris, J.E. Demuth
The Journal of Chemical Physics
J.E. Demuth, Ph. Avouris, et al.
Physical Review Letters