D.E. Eastman, J.E. Demuth
Japanese Journal of Applied Physics
Scanning tunneling microscopy is used to determine the atomic structure, charge state, and electronic energy spectrum of isolated Si dangling-bond defects at the Al/Si(111) surface. Si adatoms substituting for Al in the first atomic layer give rise to a dangling-bond defect state near -0.4 eV which is strongly localized in space. Tunneling spectra and local band-bending measurements are inconsistent with simple one-electron band theory and demonstrate the importance of many-electron effects. © 1988 The American Physical Society.
D.E. Eastman, J.E. Demuth
Japanese Journal of Applied Physics
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Journal of Electron Spectroscopy and Related Phenomena
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