Publication
Physical Review Letters
Paper

Electronic properties of semiconductors with negative-U centers

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Abstract

The concentration of free charge carriers p as a function of the doping level C [p(C) characteristic] is calculated for a semiconductor containing defects with negative correlation energy U of bound charge carrier pairs. It is shown that in a certain interval pC12 in contrast to the behavior of defects with positive correlation energy U and of singly charged defects. Therefore, one has a simple criterion to prove experimentally whether a given kind of defect level has the negative-U property or not. © 1980 The American Physical Society.

Date

24 Nov 1980

Publication

Physical Review Letters

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