J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Amorphous carbon layer EPR measurements have been fitted to a model which predicts the critical fluences at which the layer forms for any temperature and ion species; it predicts the layer will not form during nitrogen ion implantation in diamond above 1031°K. A new anisotropic EPR spectrum labeled D‐A4 is observed after hot‐implantation (650°C) with nitrogen ions. It is thought to be a spin‐one‐center arising from a small D‐tensor interaction with 〈111〉 symmetry. Hot implantation suppresses the formation of the amorphous layer and enhances creation of crystalline lattice defects. Copyright © 1974 WILEY‐VCH Verlag GmbH & Co. KGaA
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
R. Ghez, M.B. Small
JES
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JES