A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
We predict a new effect, electron-hole exchange transitions, which occur at all amphoteric defects. We show that these transitions play a dominant role in electron-hole recombination at deep centers. In particular our results demonstrate that recent conflicting data on gold-doped silicon are all consistent with the observed donor and acceptor levels belonging to the same center. © 1985 The American Physical Society.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Ronald Troutman
Synthetic Metals