Electron-hole exchange transitions at defects in semiconduc- tors

Abstract

We predict a new effect, electron-hole exchange transitions, which occur at all amphoteric defects. We show that these transitions play a dominant role in electron-hole recombination at deep centers. In particular our results demonstrate that recent conflicting data on gold-doped silicon are all consistent with the observed donor and acceptor levels belonging to the same center. © 1985 The American Physical Society.