Publication
Physical Review B
Paper

Electron-hole exchange transitions at defects in semiconduc- tors

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Abstract

We predict a new effect, electron-hole exchange transitions, which occur at all amphoteric defects. We show that these transitions play a dominant role in electron-hole recombination at deep centers. In particular our results demonstrate that recent conflicting data on gold-doped silicon are all consistent with the observed donor and acceptor levels belonging to the same center. © 1985 The American Physical Society.

Date

15 Mar 1985

Publication

Physical Review B

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