Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
We predict a new effect, electron-hole exchange transitions, which occur at all amphoteric defects. We show that these transitions play a dominant role in electron-hole recombination at deep centers. In particular our results demonstrate that recent conflicting data on gold-doped silicon are all consistent with the observed donor and acceptor levels belonging to the same center. © 1985 The American Physical Society.