R. Ghez, J.S. Lew
Journal of Crystal Growth
We calculate the Hall coefficient and the magnetoresistance of an interacting two-carrier system. Our results, derived from two simple coupled kinetic equations, are identical to those obtained from the coupled Boltzmann equations. Specializing to a semimetal, we calculate RH and as a function of doping and pressure. We find that a strong electron-electron interaction has a large effect on these quantities. © 1979 The American Physical Society.
R. Ghez, J.S. Lew
Journal of Crystal Growth
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EMC 2011
Revanth Kodoru, Atanu Saha, et al.
arXiv
K.A. Chao
Physical Review B