D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
We calculate the Hall coefficient and the magnetoresistance of an interacting two-carrier system. Our results, derived from two simple coupled kinetic equations, are identical to those obtained from the coupled Boltzmann equations. Specializing to a semimetal, we calculate RH and as a function of doping and pressure. We find that a strong electron-electron interaction has a large effect on these quantities. © 1979 The American Physical Society.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
T.N. Morgan
Semiconductor Science and Technology