Publication
Journal of Applied Physics
Paper

Electrical transport in thin films of copper silicide

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Abstract

Electrical properties of thin films of η'-Cu3Si phase with a tetragonal crystal structure are reported on. Electrical transport in these films is found to be very sensitive to oxygen exposure. Cu3Si reacts with oxygen at room temperature to form both Si and Cu oxides, resulting in high-room-temperature (∼60 μΩ cm) and even nonmetallic resistivity. This behavior is contrasted with that of low-resistivity (∼5 μΩ cm at room temperature) Cu3Ge, which is inert in an oxygen environment.

Date

01 Dec 1991

Publication

Journal of Applied Physics

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