E.T. Yu, J.-M. Halbout, et al.
Applied Physics Letters
Potential distributions across Si(001)p-n junctions have been studied using cross-sectional scanning tunneling microscopy, spectroscopy, and potentiometry. A clear transition between p- and n-type material can be seen across each junction, and variations in the energy of the conduction-band edge can be detected with a spatial resolution of better than 100 Å. Current-voltage characteristics have been measured in both unbiased and electrically biased structures, and measurements under both conditions are consistent with calculated potential distributions.
E.T. Yu, J.-M. Halbout, et al.
Applied Physics Letters
H. Salemink, M. Johnson, et al.
Solid State Electronics
J.D. Crow, L. Comerford, et al.
Proceedings of SPIE 1989
H.-N. Lin, R.J. Stoner, et al.
Applied Physics Letters